Thin films of indium oxide can be prepared by sputtering of indium target in argon/oxygen atmosphere. They can be used as diffusion barriers ("barrier metals") in semiconductors, eg. to inhibit diffusion between aluminium and silicon.
Monocrystalline nanowires were synthetized from indium oxide by laser ablation, allowing precise diameter control down to 10 nm. Field effect transistors were fabricated from those. Indium oxide nanowires can serve as sensitive and specific redox protein sensors. Sol-gel method is another way to prepare the nanowires.
Indium oxide can serve as a semiconductor material, forming heterojunctions with p-InP, n-GaAs, n-Si, and other materials. A layer of indium oxide on a silicon substrate can be deposited from an indium trichloride solution, a method useful for manufacture of solar cells.
Thin films of chromium-doped indium oxide (In2-xCrxO3) was recently reported to be a magnetic semiconductor displaying high-temperature ferromagnetism, single-phase crystal structure, and semiconductor behavior with high concentration of charge carriers. It has possible applications in spintronics as a material for spin injectors.