The drift-field transistor
, also called the drift transistor
or graded base transistor
, is a type of high-speed bipolar junction transistor
having a doping-engineered electric field
in the base to reduce the charge carrier
base transit time
Invented by Herbert Kroemer at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953, it continues to influence the design of modern high-speed bipolar junction transistors.