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Drift-field_transistor
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Drift-field transistor
The drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered electric field in the base to reduce the charge carrier base transit time.
Invented by Herbert Kroemer at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953, it continues to influence the design of modern high-speed bipolar junction transistors.
External links
- Herb’s Bipolar Transistors IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 11, NOVEMBER 2001 PDF
- Influence of Mobility and Lifetime Variations on Drift-Field Effects in Silicon-Junction Devices PDF
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Last updated on Tuesday March 25, 2008 at 22:51:23 PDT (GMT -0700)
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This article is licensed under the GNU Free Documentation License.
Last updated on Tuesday March 25, 2008 at 22:51:23 PDT (GMT -0700)
View this article at Wikipedia.org - Edit this article at Wikipedia.org - Donate to the Wikimedia Foundation
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