The
AF107 is the
European name for an early (circa
1960)
germanium-based (A)
bipolar junction transistor of
PNP polarity intended for
high frequency use (F). It shares most of its characteristics with the
AF108. Both models use a non-standard round metallic housing of 9 millimetre diameter which is electrically connected to the collector. At a housing temperature of 45 °C, these transistors can handle an internal power dissipation of 0.5 watt. Unit
gain (
β = 1) is reached at typically 250
MHz (minimum 150 MHz).
References
- Siemens Halbleiter-Datenbuch 1961, pp. 38-39