A light-emitting diode (LED) is a semiconductor diode that emits light when an electric current is applied in the forward direction of the device, as in the simple LED circuit. The effect is a form of electroluminescence where incoherent and narrow-spectrum light is emitted from the p-n junction.
LEDs are widely used as indicator lights on electronic devices and increasingly in higher power applications such as flashlights and area lighting. An LED is usually a small area (less than 1 mm2) light source, often with optics added to the chip to shape its radiation pattern and assist in reflection. The color of the emitted light depends on the composition and condition of the semiconducting material used, and can be infrared, visible, or ultraviolet. Besides lighting, interesting applications include using UV-LEDs for sterilization of water and disinfection of devices, and as a grow light to enhance photosynthesis in plants.
The first practical visible-spectrum (red) LED was developed in 1962 by Nick Holonyak Jr., while working at General Electric Company. He later moved to the University of Illinois at Urbana-Champaign. Holonyak is seen as the "father of the light-emitting diode". M. George Craford, a former graduate student of Holonyak's, invented the first yellow LED and 10x brighter red and red-orange LEDs in 1972.
Shuji Nakamura of Nichia Corporation of Japan demonstrated the first high-brightness blue LED based on InGaN borrowing on critical developments in GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN which were developed by I. Akasaki and H. Amano in Nagoya. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs demonstrating very high result by using a transparent contact made of indium tin oxide (ITO) on (AlGaInP/GaAs) LED. The existence of blue LEDs and high efficiency LEDs quickly led to the development of the first white LED, which employed a Y3Al5O12:Ce, or "YAG", phosphor coating to mix yellow (down-converted) light with blue to produce light that appears white. Nakamura was awarded the 2006 Millennium Technology Prize for his invention.
The development of LED technology has caused their efficiency and light output to increase exponentially, with a doubling occurring about every 36 months since the 1960s, in a similar way to Moore's law. The advances are generally attributed to the parallel development of other semiconductor technologies and advances in optics and material science. This trend is normally called Haitz's Law after Dr. Roland Haitz.
Most LEDs were made in the very common 5 mm T1³⁄₄ and 3 mm T1 packages, but with higher power, it has become increasingly necessary to shed excess heat in order to maintain reliability, so more complex packages adapted for efficient heat dissipation are becoming common. Packages for state-of-the-art high power LEDs bear little resemblance to early LEDs.
Like a normal diode, the LED consists of a chip of semiconducting material impregnated, or doped, with impurities to create a p-n junction. As in other diodes, current flows easily from the p-side, or anode, to the n-side, or cathode, but not in the reverse direction. Charge-carriers—electrons and holes—flow into the junction from electrodes with different voltages. When an electron meets a hole, it falls into a lower energy level, and releases energy in the form of a photon.
The wavelength of the light emitted, and therefore its color, depends on the band gap energy of the materials forming the p-n junction. In silicon or germanium diodes, the electrons and holes recombine by a non-radiative transition which produces no optical emission, because these are indirect band gap materials. The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible or near-ultraviolet light.
LED development began with infrared and red devices made with gallium arsenide. Advances in materials science have made possible the production of devices with ever-shorter wavelengths, producing light in a variety of colors.
LEDs are usually built on an n-type substrate, with an electrode attached to the p-type layer deposited on its surface. P-type substrates, while less common, occur as well. Many commercial LEDs, especially GaN/InGaN, also use sapphire substrate.
The reflection is most commonly reduced by using a dome-shaped (half-sphere) package with the diode in the center so that the outgoing light rays strike the surface perpendicularly, at which angle the reflection is minimized. Substrates that are transparent to the emitted wavelength, and backed by a reflective layer, increase the LED efficiency. The refractive index of the package material should also match the index of the semiconductor, to minimize back-reflection. An anti-reflection coating may be added as well.
The package may be colored, but this is only for cosmetic reasons or to improve the contrast ratio; the color of the packaging does not substantially affect the color of the light emitted.
Other strategies for reducing the impact of the interface reflections include designing the LED to reabsorb and reemit the reflected light (called photon recycling) and manipulating the microscopic structure of the surface to reduce the reflectance, by introducing random roughness, creating programmed moth eye surface patterns. Recently photonic crystal have also been used to minimize back-reflections. In December 2007, scientists at Glasgow University claimed to have found a way to make LEDs more energy efficient, imprinting billions of holes into LEDs using a process known as nanoimprint lithography.
|Color||Wavelength (nm)||Voltage (V)||Semi-conductor Material|
|Infrared||λ > 760||ΔV < 1,9|| Gallium arsenide (GaAs)|
Aluminium gallium arsenide (AlGaAs)
|Red||610 < λ < 760||1,63 < ΔV < 2,03|| Aluminium gallium arsenide (AlGaAs)|
Gallium arsenide phosphide (GaAsP)
Aluminium gallium indium phosphide (AlGaInP)
|Orange||590 < λ < 610||2,03 < ΔV < 2,10|| Gallium arsenide phosphide (GaAsP)|
Aluminium gallium indium phosphide (AlGaInP)
|Yellow||570 < λ < 590||2,10 < ΔV < 2,18|| Gallium arsenide phosphide (GaAsP)|
Aluminium gallium indium phosphide (AlGaInP)
|Green||500 < λ < 570||2,18 < ΔV < 4,0|| Indium gallium nitride (InGaN) / Gallium(III) nitride (GaN)|
Gallium(III) phosphide (GaP)
Aluminium gallium indium phosphide (AlGaInP)
Aluminium gallium phosphide (AlGaP)
|Blue||450 < λ < 500||2,48 < ΔV < 3,7|| Zinc selenide (ZnSe)|
Indium gallium nitride (InGaN)
Silicon carbide (SiC) as substrate
Silicon (Si) as substrate — (under development)
|Violet||400 < λ < 450||2,76 < ΔV < 4,0||Indium gallium nitride (InGaN)|
|Ultraviolet||λ < 400||3,1 < ΔV < 4,4|| diamond (C)|
Aluminium nitride (AlN)
Aluminium gallium nitride (AlGaN)
Aluminium gallium indium nitride (AlGaInN) — (down to 210 nm)
|White||Broad spectrum||ΔV = 3,5||Blue/UV diode with phosphor|
Blue LEDs are based on the wide band gap semiconductors GaN (gallium nitride) and InGaN (indium gallium nitride). They can be added to existing red and green LEDs to produce the impression of white light, though white LEDs today rarely use this principle.
The first blue LEDs were made in 1971 by Jacques Pankove (inventor of the gallium nitride LED) at RCA Laboratories. However, these devices had too little light output to be of much practical use. In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping by Isamu Akasaki and Hiroshi Amano (Nagoya, Japan) ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, in 1993 high brightness blue LEDs were demonstrated through the work of Shuji Nakamura at Nichia Corporation.
By the late 1990s, blue LEDs had become widely available. They have an active region consisting of one or more InGaN quantum wells sandwiched between thicker layers of GaN, called cladding layers. By varying the relative InN-GaN fraction in the InGaN quantum wells, the light emission can be varied from violet to amber. AlGaN aluminium gallium nitride of varying AlN fraction can be used to manufacture the cladding and quantum well layers for ultraviolet LEDs, but these devices have not yet reached the level of efficiency and technological maturity of the InGaN-GaN blue/green devices. If the active quantum well layers are GaN, as opposed to alloyed InGaN or AlGaN, the device will emit near-ultraviolet light with wavelengths around 350–370 nm. Green LEDs manufactured from the InGaN-GaN system are far more efficient and brighter than green LEDs produced with non-nitride material systems.
With nitrides containing aluminium, most often AlGaN and AlGaInN, even shorter wavelengths are achievable. Ultraviolet LEDs in a range of wavelengths are becoming available on the market. Near-UV emitters at wavelengths around 375–395 nm are already cheap and often encountered, for example, as black light lamp replacements for inspection of anti-counterfeiting UV watermarks in some documents and paper currencies. Shorter wavelength diodes, while substantially more expensive, are commercially available for wavelengths down to 247 nm. As the photosensitivity of microorganisms approximately matches the absorption spectrum of DNA, with a peak at about 260 nm, UV LEDs emitting at 250–270 nm are to be expected in prospective disinfection and sterilization devices. Recent research has shown that commercially available UVA LEDs (365 nm) are already effective disinfection and sterilization devices.
Wavelengths down to 210 nm were obtained in laboratories using aluminium nitride.
While not an LED as such, an ordinary NPN bipolar transistor will emit violet light if its emitter-base junction is subjected to non-destructive reverse breakdown. This is easy to demonstrate by filing the top off a metal-can transistor (BC107, 2N2222 or similar) and biasing it well above emitter-base breakdown (≥ 20 V) via a current-limiting resistor.
There are two ways of producing high intensity white-light using LEDs. One is to use individual LEDs that emit three primary colors – red, green, and blue, and then mix all the colors to produce white light. The other is to use a phosphor material to convert monochromatic light from a blue or UV LED to broad-spectrum white light, much in the same way a fluorescent light bulb works.
White light can be produced by mixing differently colored light, the most common method is to use red, green and blue (RGB). Hence the method is called multi-colored white LEDs (sometimes referred to as RGB LEDs). Because its mechanism is involved with sophisticated electro-optical design to control the blending and diffusion of different colors, this approach has rarely been used to mass produce white LEDs in the industry. Nevertheless this method is particularly interesting to many researchers and scientists because of the flexibility of mixing different colors . In principle, this mechanism also has higher quantum efficiency in producing white light.
There are several types of multi-colored white LEDs: di-, tri-, and tetrachromatic white LEDs. Several key factors that play among these different approaches include color stability, color rendering capability, and luminous efficacy. Often higher efficacy will mean lower color rendering, presenting a trade off between the luminous efficiency and color rendering. For example, the dichromatic white LEDs have the best luminous efficiency (120 lm/W), but the lowest color rendering capability. Oppositely although tetrachromatic white LEDs have excellent color rendering capability, they often have poor luminous efficiency. Trichromatic white LEDs are in between, having both good luminous efficiency (>70 lm/W) and fair color rendering capability.
What multi-color LEDs offer is not merely another solution of producing white light, but is a whole new technique of producing light of different colors. In principle, all perceivable colors can be produced by mixing different amounts of three primary colors, and this makes it possible to produce precise dynamic color control as well. As more effort is devoted to investigating this technique, multi-color LEDs should have profound influence on the fundamental method which we use to produce and control light color. However, before this type of LED can truly play a role on the market, several technical problems need to be solved. These certainly include that this type of LED's emission power decays exponentially with increasing temperature, resulting in a substantial change in color stability. Such problem is not acceptable for industrial usage. Therefore, many new package designs aiming to solve this problem have been proposed, and their results are being reproduced by researchers and scientists.
This method involves coating an LED of one color (mostly blue LED made of InGaN) with phosphor of different colors to produce white light, the resultant LEDs are called phosphor based white LEDs. A fraction of the blue light undergoes the Stokes shift being transformed from shorter wavelengths to longer. Depending on the color of the original LED, phosphors of different colors can be employed. If several phosphor layers of distinct colors are applied, the emitted spectrum is broadened, effectively increasing the color rendering index (CRI) value of a given LED.
Phosphor based LEDs have a lower efficiency than normal LEDs due to the heat loss from the Stokes shift and also other phosphor-related degradation issues. However, the phosphor method is still the most popular technique for manufacturing high intensity white LEDs. The design and production of a light source or light fixture using a monochrome emitter with phosphor conversion is simpler and cheaper than a complex RGB system, and the majority of high intensity white LEDs presently on the market are manufactured using phosphor light conversion.
The largest issue for the efficacy is the seemingly unavoidable Stokes energy loss. However, much effort is being spent on optimizing these devices to higher light output and higher operation temperatures. The efficiency can for instance be increased by adapting better package design or by using a more suitable type of phosphor. Philips Lumileds patented conformal coating process addresses for instance the issue of varying phosphor thickness, giving the white LEDs a more homogeneous white light. With development ongoing the efficacy is generally increased with every new product announcement.
White LEDs can also be made by coating near ultraviolet (NUV) emitting LEDs with a mixture of high efficiency europium-based red and blue emitting phosphors plus green emitting copper and aluminum doped zinc sulfide (ZnS:Cu, Al). This is a method analogous to the way fluorescent lamps work. However, the ultraviolet light causes photodegradation to the epoxy resin and many other materials used in LED packaging, causing manufacturing challenges and shorter lifetimes. This method is less efficient than the blue LED with YAG:Ce phosphor, as the Stokes shift is larger and more energy is therefore converted to heat, but yields light with better spectral characteristics, which render color better. Due to the higher radiative output of the ultraviolet LEDs than of the blue ones, both approaches offer comparable brightness. Another concern is that UV light may leak from a malfunctioning light source and cause harm to human eyes or skin.
The newest method used to produce white light LEDs uses no phosphors at all and is based on homoepitaxially grown zinc selenide (ZnSe) on a ZnSe substrate which simultaneously emits blue light from its active region and yellow light from the substrate.
Typical indicator LEDs are designed to operate with no more than 30–60 milliwatts (mW) of electrical power. Around 1999, Philips Lumileds introduced power LEDs capable of continuous use at one watt (W). These LEDs used much larger semiconductor die sizes to handle the large power inputs. Also, the semiconductor dies were mounted onto metal slugs to allow for heat removal from the LED die.
One of the key advantages of LED-based lighting is its high efficiency, as measured by its light output per unit power input. White LEDs quickly matched and overtook the efficiency of standard incandescent lighting systems. In 2002, Lumileds made five-watt LEDs available with a luminous efficacy of 18–22 lumens per watt (lm/W). For comparison, a conventional 60–100 W incandescent lightbulb produces around 15 lm/W, and standard fluorescent lights produce up to 100 lm/W. (The luminous efficacy article discusses these comparisons in more detail.)
In September 2003, a new type of blue LED was demonstrated by the company Cree, Inc. to provide 24 mW at 20 milliamperes (mA). This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. In 2006 they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Also, Seoul Semiconductor has plans for 135 lm/W by 2007 and 145 lm/W by 2008, which would be approaching an order of magnitude improvement over standard incandescents and better even than standard fluorescents. Nichia Corporation has developed a white light LED with luminous efficacy of 150 lm/W at a forward current of 20 mA.
It should be noted that high-power (≥ 1 W) LEDs are necessary for practical general lighting applications. Typical operating currents for these devices begin at 350 mA. The highest efficiency high-power white LED is claimed by Philips Lumileds Lighting Co. with a luminous efficacy of 115 lm/W (350 mA).
The most common way for LEDs (and diode lasers) to fail is the gradual lowering of light output and loss of efficiency. Sudden failures, however rare, can occur as well. Early red LEDs were notable for their short lifetime.
If the emitting layer material of the LED is an organic compound, it is known as an Organic Light Emitting Diode (OLED). To function as a semiconductor, the organic emitting material must have conjugated pi bonds. The emitting material can be a small organic molecule in a crystalline phase, or a polymer. Polymer materials can be flexible; such LEDs are known as PLEDs or FLEDs.
Compared with regular LEDs, OLEDs are lighter, and polymer LEDs can have the added benefit of being flexible. Some possible future applications of OLEDs could be:
OLEDs have been used to produce visual displays for portable electronic devices such as cellphones, digital cameras, and MP3 players. Larger displays have been demonstrated, but their life expectancy is still far too short (<1,000 hours) to be practical.
Today, OLEDs operate at substantially lower efficiency than inorganic (crystalline) LEDs. The best luminous efficacy of an OLED so far is about 68 lm/W .
A new technique developed by Michael Bowers, a graduate student at Vanderbilt University in Nashville, involves coating a blue LED with quantum dots that glow white in response to the blue light from the LED. This technique produces a warm, yellowish-white light similar to that produced by incandescent bulbs.
Quantum Dots are semiconductor nanocrystals that possess unique optical properties. Their emission color can be tuned from the visible throughout the infrared spectrum. This allows quantum dot LEDs to create almost any color on the CIE diagram. This provides more color options and better color rendering white LEDs. Quantum dot LEDs are available in the same package types as traditional phosphor based LEDs.
Unlike incandescent light bulbs, which light up regardless of the electrical polarity, LEDs will only light with correct electrical polarity. When the voltage across the p-n junction is in the correct direction, a significant current flows and the device is said to be forward-biased. If the voltage is of the wrong polarity, the device is said to be reverse biased, very little current flows, and no light is emitted. LEDs can be operated on an alternating current voltage, but they will only light with positive voltage, causing the LED to turn on and off at the frequency of the AC supply.
Most LEDs have low reverse breakdown voltage ratings, so they will also be damaged by an applied reverse voltage above this threshold. If it is desired to drive the LED directly from an AC supply of more than the reverse breakdown voltage then it may be protected by placing a diode (or another LED) in inverse parallel.
The manufacture will normally advise on the correct way to determine the polarity of the LED in the product datasheet. However, these methods may also be used:
|terminal:||anode (A)||cathode (K)|
It is strongly recommended to apply a safe voltage and observe the illumination as a test regardless of what method is used to determine the polarity.
The voltage versus current characteristics of an LED are much like any diode. Current is approximately an exponential function of voltage, so a small voltage change results in a large change in current. This can result either in a unlit LED or a current above the maximum rating, potentially destroying the LED; as the LED heats, its voltage drop decreases, further increasing current. Consequently, LEDs cannot connect directly to constant-voltage sources. A series resistor is a very simple and common way to stabilize the LED current, but wastes energy in the resistor. A constant current regulator is commonly used. Low drop-out (LDO) constant current regulators also allow the total LED string voltage to be a higher percentage of the power supply voltage, resulting in improved efficiency and reduced power use. Switching-type converters are used in some LED flashlights, stabilizing light output over a wide range of battery voltages and increasing the useful life of the batteries.
Sub-mA indicators may be made by driving ultrabright LEDs at very low current. Efficacy tends to reduce at low currents, but indicators running on 100 μA are still practical. The cost of ultrabrights is higher than 2 mA indicator LEDs.
Multiple LEDs are normally operated in parallel strings of series LEDs, with the total LED voltage typically adding up to around two-thirds of the supply voltage, with resistor current control for each string.
In disposable coin cell powered keyring type LED lights, the resistance of the cell itself is usually the only current limiting device. The cell should not therefore be replaced with a lower resistance type.
LEDs can be purchased with built in series resistors. These can save printed circuit board space and are especially useful when building prototypes or populating a PCB in a way other than its designers intended. However, the resistor value is set at the time of manufacture, removing one of the key methods of setting the LED's intensity.
Alphanumeric LEDs use the same drive strategy as indicator LEDs, the only difference being the larger number of channels, each with its own resistor. Seven-segment and starburst LED arrays are available in both common-anode or common-cathode form.
Finally, LEDs can be run from a single cell by use of a constant current switched mode invertor. The extra expense makes this option unpopular.
A CR dropper followed by full wave rectification is the usual ballast with series-parallel LED clusters. A single series string minimises dropper losses, while paralleled strings increase reliability. In practice usually three strings or more are used.
Operation on square wave and modified sine wave (MSW) sources, such as many invertors, causes heavily increased resistor dissipation in CR droppers, and LED ballasts designed for sine wave use tend to burn on non-sine waveforms. The non-sine waveform also causes high peak LED currents, heavily shortening LED life. An inductor & rectifier makes a more suitable ballast for such use, and other options are also possible.
Multiple LEDs can be connected in series with a single current limiting resistor provided the source voltage is greater than the sum of the individual LED threshold voltages. Parallel operation is also possible but can be more problematic. Parallel LEDs must have closely matched forward voltages (Vf) in order to have equal branch currents and, therefore, equal light output. Variations in the manufacturing process can make it difficult to obtain satisfactory operation when connecting some types of LEDs in parallel.
To increase efficiency (or to allow intensity control without the complexity of a DAC), the power may be applied periodically or intermittently; so long as the flicker rate is greater than the human flicker fusion threshold, the LED will appear to be continuously lit.
These are mostly single-die LEDs used as indicators, and they come in various-size packages:
Common package shapes:
The encapsulation may also be clear or semi opaque to improve contrast and viewing angle.
There are three main categories of miniature single die LEDs:
High power LEDs (HPLED) can be driven at more than one ampere of current and give out large amounts of light. Since overheating is destructive, the HPLEDs must be highly efficient to minimize excess heat; furthermore, they are often mounted on a heat sink to allow for heat dissipation. If the heat from a HPLED is not removed, the device will burn out in seconds.
A single HPLED can often replace an incandescent bulb in a flashlight, or be set in an array to form a powerful LED lamp.
LEDs have been developed that can run directly from mains power without the need for a DC converter. For each half cycle part of the LED diode emits light and part is dark, and this is reversed during the next half cycle. Current efficiency is 80 lm/W.
A “tri-color LED” is also two LEDs in one case, but the two LEDs are connected to separate leads so that the two LEDs can be controlled independently and lit simultaneously. A three-lead arrangement is typical with one commmon lead (anode or cathode).
RGB LEDs contain red, green and blue emitters, generally using a four-wire connection with one common lead (anode or cathode).
The Taiwanese LED manufacturer Everlight has introduced a 3 watt RGB package capable of driving each die at 1 watt.
Seven-segment LED displays were in widespread use in the 1970s and 1980s, but increasing use of liquid crystal displays, with their lower power consumption and greater display flexibility, has reduced the popularity of numeric and alphanumeric LED displays.
Machine vision systems often require bright and homogeneous illumination, so features of interest are easier to process. LEDs are often used to this purpose, and this field of application is likely to remain one of the major application areas until price drops low enough to make signaling and illumination applications more widespread. LEDs constitute a nearly ideal light source for machine vision systems for several main reasons:
US Patent Issued to Commissariat L'energie Atomique Aux Energies Alternatives on May 7 for "Method for Characterisation of Dielectric Layers by Ultraviolet Photo-Emission Spectroscopy" (French Inventors)
May 08, 2013; ALEXANDRIA, Va., May 8 -- United States Patent no. 8,436,300, issued on May 7, was assigned to Commissariat a l'energie atomique...