Plasma Enhanced Chemical Vapour Deposition, PECVD or sometimes PCVD, is the process by which chemicals are deposited onto a substrate using a Radio Frequency (RF) Plasma to split the precursors into active ions.
Silicon Dioxide, Silicon Nitride, Silicon
Tin oxide, Indium tin oxide
Publication No. WO/2010/011076 Published on Jan. 28, Assigned to Femvix for Continuous Solid Powder Vapour-deposition Device, Continuous Solid Powder Vapour Deposition Method (South Korean Inventors)
Jan 28, 2010; GENEVA, Jan. 30 -- Ok Ryul Kim, Ok Min Kim, Kuen Sik Lee and Seung Chae Cheong, all from South Korea, have developed a continuous...
WIPO PUBLISHES PATENT OF AIXTRON FOR "THERMAL GRADIENT ENHANCED CHEMICAL VAPOUR DEPOSITION (TGE-CVD)" (BRITISH INVENTORS)
Jun 07, 2012; GENEVA, June 6 -- Publication No. WO/2012/069451 was published on May 31. Title of the invention: "THERMAL GRADIENT ENHANCED...
WIPO ASSIGNS PATENT TO DAWONSYS FOR "POWER SOURCE DEVICE FOR A CHEMICAL VAPOUR DEPOSITION DEVICE AND A METHOD FOR CONTROLLING THE SAME" (SOUTH KOREAN INVENTOR)
Sep 19, 2011; GENEVA, Sept. 19 -- Publication No. WO/2011/111960 was published on Sept. 15. Title of the invention: "POWER SOURCE DEVICE FOR A...