Electronic circuits generally involve small time-varying signals carried over a constant bias. This suggests using a method akin to approximation by differentials to analyze relatively small perturbations about the bias point.
Any nonlinear device which can be described quantitatively using a formula can then be 'linearized' about a bias point by taking partial derivatives of the formula with respect to all governing variables. These partial derivatives can be associated with physical quantities (such as capacitance, resistance and inductance), and a circuit diagram relating them can be formulated. Small-signal models exist for diodes, field-effect transistors (FET) and bipolar transistors, notably the hybrid-pi model and various two-port networks.
The (large-signal) Shockley equation for a diode can be linearized about the bias point or quiescent point (sometimes called Q-point) to find the small-signal conductance, capacitance and resistance of the diode. This procedure is described in more detail under diode modeling, which provides an example of the linearization procedure followed in all small-signal models of semiconductor devices.
A C-BAND LOW POWER HIGH DYNAMIC RANGE GAAS MESFET LOW NOISE AMPLIFIER.(Brief Article)(Statistical Data Included)
Feb 01, 2000; This article describes a C-band low power high dynamic range GaAs MESFET cascode low noise amplifier (LNA). Accurate small-signal...