The main advantage of HEBT architecture, compared to the HBT is a simplified fabrication process for the emitter–base junction. In particular the HEBT does not require as tight parametric control during epitaxial growth, that equivalent abrupt or graded emitter structures might. This is very important as it is evident from scanning ion mass spectrometry data that out-diffusion base dopant into the emitter junction is difficult to control, as the base is, in general, very highly doped in order to enhance performance.
The HEBT is well positioned as a potential candidate for key roles in high-frequency optoelectronic markets, similar to the Heterojunction bipolar transistor. Also of importance for optoelectronic hybrids is that HEBT can be constructed in any semiconductor system that permits the use of band-gap–altering alloys in the emitter.